This equipment has 2 sets of independent process furnace tubes, which are mainly used to deposit silicon nitride on GaN heterostructure silicon wafers with a diameter of 200 mm through a low-pressure vapor deposition process.

1. High degree of automation: the automatic boat pushing system is adopted, and the material in and out operations is highly automated and labor intensity is low; One-touch operation, the process is fully automatic.
2. Flexible operation mode: It has two operating modes, manual and automatic, and the whole process can be automatically controlled through the program in automatic mode.
3. Excellent temperature control accuracy: The furnace body adopts three-stage PID temperature control. Optimize the distribution of furnace wire pitch and effectively compensate for the furnace heat loss at the inlet and furnace tail.
4. Comprehensive protection features: Equipped with multiple protection features, including process tube overtemperature protection, coupler burnout protection, boat entry limit protection, boat flow deviation alarm, and process parameter protection.
5. High purification level: Utilizing a horizontal laminar flow design, the purified airflow flows horizontally, achieving Class 100 purification standards (ambient background Class 1000).
6. A fully automatic control system with proprietary intellectual property rights meets various process requirements.