This semiconductor testing and analysis system is a specialized instrument designed for measuring and analyzing static parameters of power semiconductor devices, providing comprehensive static parameter measurement solutions for all types of power semiconductor devices. Equipped with high-precision, wide-range, and high-power SMUs, the product supports IV/CV/Rg/Qg parameter testing for mainstream power devices, power modules, and wide-bandgap semiconductors (SiC, GaN), meeting the testing requirements for R&D, detection, and analysis in the semiconductor industry.

1. It supports accurate measurement and analysis of static parameters of power semiconductor devices under conditions of 3kV (expandable to 10kV) and 2200A.
2. It supports connection to thermal stream hoods and temperature chambers for high and low-temperature testing.
3. It supports connection to probe stations for wafer-level testing.
4. Equipped with SMU board-based resource modules, each module integrates both measurement and sourcing capabilities.
5. With a minimum current resolution of 10fA, it is the first domestic semiconductor testing system featuring fast pulse capability, fA-level current detection, and wide voltage/current measurement ranges.
6. It meets C-V, Qg, and Rg testing requirements.
7. It fulfills the static parameter testing needs (such as VTH, ICES/IDSS, IGES/IGSS, VCEsat, RDSON, VDSON, V(BR)CE, VF/VSD, etc.) and CISS+COSS+CRSS curve testing requirements for Si-based devices like IGBT/DIODE/MOSFET, as well as new material devices (GaN and SiC).